MT29E3T08EUHBBM4-3ES:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 3TB PARALLEL 333MHZ
$0.00
Available to order
Reference Price (USD)
1,000+
$152.35200
Exquisite packaging
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Enhance your projects with the MT29E3T08EUHBBM4-3ES:B TR Memory IC from Micron Technology Inc., a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The MT29E3T08EUHBBM4-3ES:B TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The MT29E3T08EUHBBM4-3ES:B TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The MT29E3T08EUHBBM4-3ES:B TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 3Tb (384G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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