MT29E4T08EYHBBG9-3:B
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 4TB PARALLEL 333MHZ
$0.00
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Reference Price (USD)
980+
$213.36180
Exquisite packaging
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Discover the MT29E4T08EYHBBG9-3:B Memory IC by Micron Technology Inc., a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The MT29E4T08EYHBBG9-3:B is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the MT29E4T08EYHBBG9-3:B, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The MT29E4T08EYHBBG9-3:B stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the MT29E4T08EYHBBG9-3:B span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The MT29E4T08EYHBBG9-3:B is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Tb (512G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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