MT29E512G08CEHBBJ4-3ES:B TR

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Description:

IC FLASH 512GBIT PAR 132VBGA

Datasheet:

MT29E512G08CEHBBJ4-3ES:B TR Datasheet

$0.00

Available to order

Reference Price (USD)

1,000+

$27.77940

Exquisite packaging

Discount

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The MT29E512G08CEHBBJ4-3ES:B TR from Micron Technology Inc. is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the MT29E512G08CEHBBJ4-3ES:B TR ensures longevity and consistent performance in various environments. Memory ICs like the MT29E512G08CEHBBJ4-3ES:B TR are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the MT29E512G08CEHBBJ4-3ES:B TR delivers unmatched reliability and efficiency. The MT29E512G08CEHBBJ4-3ES:B TR is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.