MT29F2T08CUHBBM4-3R:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 2TB PARALLEL 333MHZ
$250.38
Available to order
Reference Price (USD)
1,000+
$230.34960
Exquisite packaging
Discount
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The MT29F2T08CUHBBM4-3R:B TR from Micron Technology Inc. is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the MT29F2T08CUHBBM4-3R:B TR ensures longevity and consistent performance in various environments.
Memory ICs like the MT29F2T08CUHBBM4-3R:B TR are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the MT29F2T08CUHBBM4-3R:B TR delivers unmatched reliability and efficiency.
The MT29F2T08CUHBBM4-3R:B TR is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Not For New Designs
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 2Tb (256G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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