MT29F3T08EUHBBM4-3R:B
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 3TB PARALLEL 333MHZ
$0.00
Available to order
Reference Price (USD)
1,120+
$237.26340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MT29F3T08EUHBBM4-3R:B Memory IC by Micron Technology Inc. is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the MT29F3T08EUHBBM4-3R:B, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The MT29F3T08EUHBBM4-3R:B features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the MT29F3T08EUHBBM4-3R:B include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The MT29F3T08EUHBBM4-3R:B is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 3Tb (384G x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.5V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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