MT29F3T08EUHBBM4-3RES:B TR

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Description:

IC FLASH 3TB PARALLEL 333MHZ

Datasheet:

MT29F3T08EUHBBM4-3RES:B TR Datasheet

$0.00

Available to order

Reference Price (USD)

1,000+

$186.52080

Exquisite packaging

Discount

TT / Paypal / Credit Card / Western Union / Money Gram

The MT29F3T08EUHBBM4-3RES:B TR Memory IC by Micron Technology Inc. is a high-performance component designed for the Memory category. This IC provides exceptional data storage and retrieval speeds, making it ideal for demanding electronic systems. Its durable design ensures reliable operation in various environments. Memory ICs, including the MT29F3T08EUHBBM4-3RES:B TR, are known for their ability to manage large datasets efficiently. These components are vital for systems that require quick and accurate memory access. The MT29F3T08EUHBBM4-3RES:B TR features advanced technology that enhances speed and reduces power consumption, catering to modern electronic needs. Applications of the MT29F3T08EUHBBM4-3RES:B TR span across industries such as aerospace, consumer electronics, and industrial automation. For instance, it is used in flight control systems for precise data handling and in smart TVs for seamless streaming. The MT29F3T08EUHBBM4-3RES:B TR is a trusted and high-quality Memory IC for a wide range of applications.

Specifications

Product Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 3Tb (384G x 8)
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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MT29F3T08EUHBBM4-3RES:B TR

Reference Price (USD)

Specifications

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