MT29F4T08EYCBBG9-37ES:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 4TB PARALLEL 267MHZ
$0.00
Available to order
Reference Price (USD)
1,000+
$193.95900
Exquisite packaging
Discount
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The MT29F4T08EYCBBG9-37ES:B TR Memory IC by Micron Technology Inc. is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the MT29F4T08EYCBBG9-37ES:B TR, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The MT29F4T08EYCBBG9-37ES:B TR features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the MT29F4T08EYCBBG9-37ES:B TR include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The MT29F4T08EYCBBG9-37ES:B TR is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 4Tb (512G x 8)
- Memory Interface: Parallel
- Clock Frequency: 267 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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