MT29F6T08ETCBBM5-37ES:B TR
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 6TB PARALLEL 267MHZ
$0.00
Available to order
Reference Price (USD)
1,000+
$287.26080
Exquisite packaging
Discount
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Upgrade your systems with the MT29F6T08ETCBBM5-37ES:B TR Memory IC from Micron Technology Inc., a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The MT29F6T08ETCBBM5-37ES:B TR showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The MT29F6T08ETCBBM5-37ES:B TR excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The MT29F6T08ETCBBM5-37ES:B TR is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 6Tb (768G x 8)
- Memory Interface: Parallel
- Clock Frequency: 267 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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