MT29RZ4B2DZZHGSK-18 W.80E
Micron Technology Inc.
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 162VFBGA
$0.00
Available to order
Reference Price (USD)
1,000+
$6.98625
Exquisite packaging
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Discover the MT29RZ4B2DZZHGSK-18 W.80E Memory IC by Micron Technology Inc., a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The MT29RZ4B2DZZHGSK-18 W.80E is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the MT29RZ4B2DZZHGSK-18 W.80E, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The MT29RZ4B2DZZHGSK-18 W.80E stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the MT29RZ4B2DZZHGSK-18 W.80E span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The MT29RZ4B2DZZHGSK-18 W.80E is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: FLASH, RAM
- Technology: FLASH - NAND, DRAM - LPDDR2
- Memory Size: 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
- Memory Interface: Parallel
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.8V
- Operating Temperature: -25°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 162-VFBGA
- Supplier Device Package: 162-VFBGA (11.5x13)
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