MT41J512M8RH-107:E
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 78FBGA
$0.00
Available to order
Reference Price (USD)
1,000+
$5.90625
Exquisite packaging
Discount
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The MT41J512M8RH-107:E Memory IC by Micron Technology Inc. is a high-performance component designed for the Memory category. This IC provides exceptional data storage and retrieval speeds, making it ideal for demanding electronic systems. Its durable design ensures reliable operation in various environments.
Memory ICs, including the MT41J512M8RH-107:E, are known for their ability to manage large datasets efficiently. These components are vital for systems that require quick and accurate memory access. The MT41J512M8RH-107:E features advanced technology that enhances speed and reduces power consumption, catering to modern electronic needs.
Applications of the MT41J512M8RH-107:E span across industries such as aerospace, consumer electronics, and industrial automation. For instance, it is used in flight control systems for precise data handling and in smart TVs for seamless streaming. The MT41J512M8RH-107:E is a trusted and high-quality Memory IC for a wide range of applications.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: 933 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20 ns
- Voltage - Supply: 1.425V ~ 1.575V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 78-TFBGA
- Supplier Device Package: 78-FBGA (9x10.5)
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