MT41K512M8V00HWC1
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL DIE
$11.47
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Reference Price (USD)
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$11.18000
Exquisite packaging
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Experience top-tier performance with the MT41K512M8V00HWC1 Memory IC from Micron Technology Inc., a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The MT41K512M8V00HWC1 exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The MT41K512M8V00HWC1 provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The MT41K512M8V00HWC1 is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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