MT41K512M8V90BWC1
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL
$0.00
Available to order
Reference Price (USD)
Call+
$Call
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with the MT41K512M8V90BWC1 Memory IC from Micron Technology Inc., a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The MT41K512M8V90BWC1 showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The MT41K512M8V90BWC1 excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The MT41K512M8V90BWC1 is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR3L
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.283V ~ 1.45V
- Operating Temperature: 0°C ~ 95°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
25LC512-I/S16K
Micron Technology Inc.
MT53D512M64D4NY-046 XT ES:E TR
Micron Technology Inc.
MT29TZZZ8D5JKEPD-125 W.95T
Micron Technology Inc.
MT42L64M64D2MC-3 IT:A
Micron Technology Inc.
MTFC128GAOANEA-WT TR
Micron Technology Inc.
M29W800FB70N3E
Micron Technology Inc.
EDFA364A3MA-GD-F-R
Cypress Semiconductor Corp
CG8071AAT
Infineon Technologies
S72XS256RE0AHBJH3
Microchip Technology