Shopping cart

Subtotal: $0.00

MT47H128M4CB-3:B TR

Micron Technology Inc.
MT47H128M4CB-3:B TR Preview
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
$0.00
Available to order
Reference Price (USD)
1,000+
$14.41778
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (128M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450 ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA

Related Products

Renesas Electronics America Inc

7016S20PF

Winbond Electronics

W25Q128FWEIQ TR

ISSI, Integrated Silicon Solution Inc

IS61LPD51236A-200TQI-TR

Micron Technology Inc.

MT46H128M32L2KQ-5 WT:B TR

Micron Technology Inc.

TE28F320C3TD70A

Fremont Micro Devices Ltd

FT24C04A-ULR-T

Renesas Electronics America Inc

IDT70T631S12DDI

Renesas Electronics America Inc

IDT71T75802S133PFI

Renesas Electronics America Inc

7034S20PF

Top