MT47H128M8SH-25E:M
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 60FBGA
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Reference Price (USD)
1,518+
$3.83254
Exquisite packaging
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Enhance your projects with the MT47H128M8SH-25E:M Memory IC from Micron Technology Inc., a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The MT47H128M8SH-25E:M exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The MT47H128M8SH-25E:M provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The MT47H128M8SH-25E:M is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (8x10)
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