MT47H256M8EB-3:C TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 60FBGA
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The MT47H256M8EB-3:C TR from Micron Technology Inc. is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the MT47H256M8EB-3:C TR ensures longevity and consistent performance in various environments.
Memory ICs like the MT47H256M8EB-3:C TR are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the MT47H256M8EB-3:C TR delivers unmatched reliability and efficiency.
The MT47H256M8EB-3:C TR is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gb (256M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-FBGA (9x11.5)
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