MT47H512M4THN-25E:M TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 63FBGA
$0.00
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Reference Price (USD)
2,000+
$21.87000
Exquisite packaging
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Discover the MT47H512M4THN-25E:M TR Memory IC by Micron Technology Inc., a cutting-edge solution for your data storage needs. This IC is part of the Memory category, known for its high-density storage and rapid data transfer rates. The MT47H512M4THN-25E:M TR is engineered to meet the demands of advanced electronic systems, offering superior performance and energy efficiency.
Memory ICs, including the MT47H512M4THN-25E:M TR, are characterized by their ability to store and retrieve data quickly and accurately. These components are vital for systems that require frequent data access, such as computing and communication devices. The MT47H512M4THN-25E:M TR stands out with its low latency, high bandwidth, and reliable operation under varying conditions.
Applications of the MT47H512M4THN-25E:M TR span across industries, including telecommunications, medical devices, and industrial automation. For example, it is used in servers for data centers, ensuring fast and secure data handling, and in medical equipment where precision and reliability are paramount. The MT47H512M4THN-25E:M TR is a trusted choice for professionals seeking high-quality Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 2Gb (512M x 4)
- Memory Interface: Parallel
- Clock Frequency: 400 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 400 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 63-TFBGA
- Supplier Device Package: 63-FBGA (8x10)
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