MT53B256M64D2NV MS
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 16GBIT FBGA
$0.00
Available to order
Reference Price (USD)
1,540+
$34.84500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with the MT53B256M64D2NV MS Memory IC from Micron Technology Inc., a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The MT53B256M64D2NV MS showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The MT53B256M64D2NV MS excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The MT53B256M64D2NV MS is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 16Gb (256M x 64)
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: 0°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Micron Technology Inc.
EMB8132B4PM-DV-F-D
Asahi Kasei Microdevices/AKM
AK6508CT
Cypress Semiconductor Corp
S34SL02G200BHI003
Micron Technology Inc.
MT29C1G12MAADAFAKD-6 E IT
Renesas Electronics America Inc
70T3589S133DR8
Micron Technology Inc.
MT52L8DBQC-DC
Cypress Semiconductor Corp
S99GL512S10TFI010
Renesas Electronics America Inc
7133SA55PFI
STMicroelectronics
M27W801-100N6
Infineon Technologies