MT53D512M64D4RQ-046 WT ES:E TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 556WFBGA
$0.00
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Reference Price (USD)
2,000+
$119.68500
Exquisite packaging
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Experience top-tier performance with the MT53D512M64D4RQ-046 WT ES:E TR Memory IC from Micron Technology Inc., a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The MT53D512M64D4RQ-046 WT ES:E TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The MT53D512M64D4RQ-046 WT ES:E TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The MT53D512M64D4RQ-046 WT ES:E TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 556-WFBGA
- Supplier Device Package: 556-WFBGA (12.4x12.4)
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