MT53D512M64D4SB-046 XT ES:E TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ FBGA
$0.00
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Reference Price (USD)
2,000+
$49.05000
Exquisite packaging
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Upgrade your systems with the MT53D512M64D4SB-046 XT ES:E TR Memory IC from Micron Technology Inc., a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The MT53D512M64D4SB-046 XT ES:E TR showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The MT53D512M64D4SB-046 XT ES:E TR excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The MT53D512M64D4SB-046 XT ES:E TR is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 32Gb (512M x 64)
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 105°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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