MUBW30-12E6K
IXYS
IXYS
IGBT MODULE 1200V 30A 130W E1
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IXYS's MUBW30-12E6K sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MUBW30-12E6K in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the MUBW30-12E6K power module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 130 W
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 30A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.18 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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