MUN2134T1G
onsemi
onsemi
TRANS PREBIAS PNP 230MW SC59
$0.04
Available to order
Reference Price (USD)
1+
$0.03731
500+
$0.0369369
1000+
$0.0365638
1500+
$0.0361907
2000+
$0.0358176
2500+
$0.0354445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, MUN2134T1G offers unmatched convenience. onsemi's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
Related Products
Nexperia USA Inc.
PDTC144VT,215
Rohm Semiconductor
DTA044TUBTL
onsemi
MMUN2212LT1G
NTE Electronics, Inc
NTE2367
onsemi
MUN2132T1G
Nexperia USA Inc.
PDTD114EQAZ
Diodes Incorporated
DDTC144TCA-7-F
Diodes Incorporated
DDTC113ZUA-7-F
Rohm Semiconductor
DTA144TMT2L
Toshiba Semiconductor and Storage