MUR20060CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 600V 100A 2TOWER
$101.66
Available to order
Reference Price (USD)
25+
$78.26560
Exquisite packaging
Discount
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Introducing GeneSiC Semiconductor's MUR20060CTR, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust GeneSiC Semiconductor's decades of semiconductor expertise embedded in every MUR20060CTR for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 110 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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