MURTA200120R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.2KV 100A 3 TOWER
$145.32
Available to order
Reference Price (USD)
18+
$104.63222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MURTA200120R from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MURTA200120R maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 100 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Related Products
Nexperia USA Inc.
BAS70-04WF
Nexperia USA Inc.
BAS101S,215
Powerex Inc.
LD412660
Vishay General Semiconductor - Diodes Division
VS-VSKCS200/045
Vishay General Semiconductor - Diodes Division
GSD2004A-E3-08
Vishay General Semiconductor - Diodes Division
VS-16CTU04HN3
onsemi
MBR30H100CTH
Vishay General Semiconductor - Diodes Division
VFT6045CBP-M3/4W
GeneSiC Semiconductor
MUR2X030A04
IXYS