MURTA600120
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE GEN 1.2KV 300A 3 TOWER
$207.42
Available to order
Reference Price (USD)
18+
$139.17111
Exquisite packaging
Discount
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The MURTA600120 from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MURTA600120 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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