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MVB50P03HDLT4G

onsemi
MVB50P03HDLT4G Preview
onsemi
MOSFET P-CH 30V 50A D2PAK-3
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 5 V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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