MWI100-12A8T
IXYS
IXYS
IGBT MODULE 1200V 160A 640W E3
$0.00
Available to order
Reference Price (USD)
5+
$153.41000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with IXYS's MWI100-12A8T IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MWI100-12A8T offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MWI100-12A8T in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MWI100-12A8T IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 160 A
- Power - Max: 640 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Current - Collector Cutoff (Max): 6.3 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
Related Products
Infineon Technologies
IRG5K150HF06A
Microsemi Corporation
APTGF90SK60TG
Vishay General Semiconductor - Diodes Division
VS-GB400TH120N
Microsemi Corporation
APTGL90DH120T3G
Infineon Technologies
FS800R07A2E3BOSA4
Infineon Technologies
FS150R12KT4PB11BPSA1
Infineon Technologies
FT150R12KE3GB4BDLA1
Microsemi Corporation
APTGF90H60TG
IXYS
MITA30WB600TMH
Infineon Technologies