MWI150-06A8T
IXYS
IXYS
IGBT MODULE 600V 170A 515W E3
$0.00
Available to order
Reference Price (USD)
5+
$138.49600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the MWI150-06A8T IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MWI150-06A8T finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MWI150-06A8T.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 170 A
- Power - Max: 515 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Current - Collector Cutoff (Max): 1.5 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
Related Products
onsemi
F59318969D
Microsemi Corporation
APTGF30A60T1G
Microsemi Corporation
APTGF90A60D1G
Powerex Inc.
CM300HA-12H
Microsemi Corporation
APTGT100A60TG
Infineon Technologies
BSM100GD60DLCBDLA1
Powerex Inc.
CM1000HA-28H
Littelfuse Inc.
MG17200D-BN4MM
Vishay General Semiconductor - Diodes Division
VS-70MT060WSP
Infineon Technologies