MWI30-12E6K
IXYS
IXYS
IGBT MODULE 1200V 29A 130W E1
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Engineered for excellence, the MWI30-12E6K IGBT module by IXYS sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The MWI30-12E6K finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. IXYS continues to lead the IGBT module revolution with innovations like the MWI30-12E6K.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 29 A
- Power - Max: 130 W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 20A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 1.18 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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