MWI75-12T8T
IXYS
IXYS
IGBT MODULE 1200V 110A 360W E3
$0.00
Available to order
Reference Price (USD)
5+
$119.12000
Exquisite packaging
Discount
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The MWI75-12T8T by IXYS redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the MWI75-12T8T in high-efficiency servo controllers for manufacturing automation. IXYS combines innovation with quality in every MWI75-12T8T module.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 360 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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