MX2N5115
Microchip Technology
Microchip Technology
N CHANNEL JFET
$70.96
Available to order
Reference Price (USD)
1+
$70.96500
500+
$70.25535
1000+
$69.5457
1500+
$68.83605
2000+
$68.1264
2500+
$67.41675
Exquisite packaging
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The MX2N5115 JFET by Microchip Technology is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The MX2N5115 performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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