NAND01GW3B2CN6E
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP
$0.00
Available to order
Reference Price (USD)
576+
$5.00040
Exquisite packaging
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The NAND01GW3B2CN6E Memory IC by Micron Technology Inc. is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the NAND01GW3B2CN6E, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The NAND01GW3B2CN6E features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the NAND01GW3B2CN6E include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The NAND01GW3B2CN6E is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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