NAND512R3A2BZA6E
STMicroelectronics
STMicroelectronics
IC FLSH 512MBIT PARALLEL 63VFBGA
$0.00
Available to order
Reference Price (USD)
1,260+
$8.22150
Exquisite packaging
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Upgrade your systems with the NAND512R3A2BZA6E Memory IC from STMicroelectronics, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The NAND512R3A2BZA6E showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The NAND512R3A2BZA6E excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The NAND512R3A2BZA6E is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 60 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-VFBGA (8.5x15)
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