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NDDP010N25AZ-1H

onsemi
NDDP010N25AZ-1H Preview
onsemi
MOSFET N-CH 250V 10A IPAK/TP
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 52W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK/TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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