NDP6020P
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
$0.00
Available to order
Reference Price (USD)
1+
$2.05000
10+
$1.85700
100+
$1.50230
800+
$1.07066
1,600+
$0.98691
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NDP6020P by Fairchild Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the NDP6020P is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRFDC20
onsemi
MTB3N60E
onsemi
MCH3478-TL-W
Renesas Electronics America Inc
NP60N055KUG-E1-AY
Infineon Technologies
SPB73N03S2L08T
Vishay Siliconix
SUD50N024-09P-E3
Infineon Technologies
AUIRFBA1405
Panjit International Inc.
PJD1NA60A_L2_00001
Vishay Siliconix
IRFD9010
Infineon Technologies