Shopping cart

Subtotal: $0.00

NDS9952A

Fairchild Semiconductor
NDS9952A Preview
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.48264
5,000+
$0.45984
12,500+
$0.44356
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC

Related Products

Infineon Technologies

IRF7379QTRPBF

Micro Commercial Co

MCQ3779-TP

STMicroelectronics

STS3C2F100

Vishay Siliconix

SIA914DJ-T1-GE3

Infineon Technologies

IRF40H233XTMA1

Infineon Technologies

IPG20N06S415ATMA1

Micro Commercial Co

MCS8804-TP

Infineon Technologies

IRL6372PBF

Top