NE3210S01-T1B
CEL
CEL
FET RF 4V 12GHZ S01
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As a leading solution in the Discrete Semiconductor Products market, the NE3210S01-T1B RF MOSFET from CEL (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The NE3210S01-T1B's advanced design ensures maximum power transfer with minimal distortion. With CEL's expertise in semiconductor innovation, the NE3210S01-T1B provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 15mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD
- Supplier Device Package: SMD
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