NE3512S02-A
CEL
CEL
HJ-FET NCH 13.5DB S02
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The NE3512S02-A is a high-efficiency RF MOSFET transistor by CEL, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The NE3512S02-A's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With CEL's reputation for quality, you can trust the NE3512S02-A to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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