NE3514S02-T1C-A
CEL
CEL
HJ-FET NCH 10DB S02
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The NE3514S02-T1C-A RF MOSFET transistor by CEL is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The NE3514S02-T1C-A stands out for its ability to handle high power levels while maintaining signal integrity. When you choose CEL's NE3514S02-T1C-A, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 10dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.75dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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