NE3516S02-T1C-A
CEL
CEL
IC HJ-FET RF N-CH S02 4-MICROX
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The NE3516S02-T1C-A from CEL is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the NE3516S02-T1C-A is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust CEL's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel GaAs HJ-FET
- Frequency: 12GHz
- Gain: 14dB
- Voltage - Test: 2 V
- Current Rating (Amps): 60mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: 165mW
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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