NE3517S03-T1C-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
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As a leading solution in the Discrete Semiconductor Products market, the NE3517S03-T1C-A RF MOSFET from Renesas Electronics America Inc (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The NE3517S03-T1C-A's advanced design ensures maximum power transfer with minimal distortion. With Renesas Electronics America Inc's expertise in semiconductor innovation, the NE3517S03-T1C-A provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 20GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 15mA
- Noise Figure: 0.7dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S03
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