NE5550979A-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF N-CHANNEL POWER MOSFET
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The NE5550979A-T1-A from Renesas Electronics America Inc is a high-performance RF MOSFET transistor designed for demanding applications in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - RF subcategory, this component offers exceptional gain, low noise, and high-frequency operation, making it ideal for RF amplification and switching circuits. Key features include low on-resistance, fast switching speeds, and excellent thermal stability. These transistors are widely used in wireless communication systems, radar equipment, and RF power amplifiers. For instance, the NE5550979A-T1-A is commonly employed in 5G base stations, military communication devices, and industrial RF heating systems where reliability and efficiency are paramount. Trust Renesas Electronics America Inc's expertise in semiconductor technology to deliver superior performance for your RF applications.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 900MHz
- Gain: 22dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): 3A
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 38.6dBm
- Voltage - Rated: 30 V
- Package / Case: 79A
- Supplier Device Package: 79A
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