NE651R479A-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL 8V 1A GAAS HFET
$7.34
Available to order
Reference Price (USD)
1+
$7.34000
500+
$7.2666
1000+
$7.1932
1500+
$7.1198
2000+
$7.0464
2500+
$6.973
Exquisite packaging
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The NE651R479A-T1-A is a high-efficiency RF MOSFET transistor by Renesas Electronics America Inc, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The NE651R479A-T1-A's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Renesas Electronics America Inc's reputation for quality, you can trust the NE651R479A-T1-A to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 1.9GHz
- Gain: 12dB
- Voltage - Test: 3.5 V
- Current Rating (Amps): 1A
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 27dBm
- Voltage - Rated: 8 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
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