NE68518-T1-A
Renesas
Renesas
RF TRANS NPN 6V 12GHZ SOT343
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
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Upgrade your RF circuits with the NE68518-T1-A, a high-efficiency Bipolar Junction Transistor (BJT) from Renesas. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The NE68518-T1-A offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Renesas for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
- Gain: 11dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
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