NE68819-T1
CEL
CEL
RF TRANS NPN 6V 5GHZ 3SMINIMOLD
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The NE68819-T1 RF Bipolar Junction Transistor (BJT) by CEL is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NE68819-T1 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose CEL for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.7dB ~ 2.5dB @ 2GHz
- Gain: -
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 3mA, 1V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: 3-SuperMiniMold (19)
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