NGB18N40CLBT4G
onsemi
onsemi
IGBT 430V 18A 115W D2PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the NGB18N40CLBT4G Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the NGB18N40CLBT4G provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose NGB18N40CLBT4G for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
- Power - Max: 115 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK
Related Products
Microchip Technology
APT33GF120LRDQ2G
IXYS
IXGH30N60C2D4
Infineon Technologies
IRGS4064DTRRPBF
Infineon Technologies
IRG4BC40UPBF
Infineon Technologies
IRG4PC40FDPBF
onsemi
SGH15N60RUFDTU
Infineon Technologies
IRG7PH50U-EP
IXYS
IXGP15N100C
Harris Corporation
IGTH20N50A
onsemi