NGD18N45CLBT4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
2,500+
$0.66150
5,000+
$0.63000
Exquisite packaging
Discount
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The NGD18N45CLBT4G by onsemi is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With onsemi's reputation for quality, the NGD18N45CLBT4G is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 50 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 4.5V, 7A
- Power - Max: 115 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: 420ns/2.9µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
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