NGTB15N60S1EG
onsemi
onsemi
IGBT 600V 30A 117W TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$1.68000
50+
$1.42540
100+
$1.22150
500+
$1.01194
1,000+
$0.84656
Exquisite packaging
Discount
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Enhance your electronic projects with the NGTB15N60S1EG Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the NGTB15N60S1EG ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose NGTB15N60S1EG for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
- Power - Max: 117 W
- Switching Energy: 550µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 88 nC
- Td (on/off) @ 25°C: 65ns/170ns
- Test Condition: 400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 270 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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