NGTB30N120IHRWG
onsemi
onsemi
IGBT 1200V 60A 384W TO247
$0.00
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Reference Price (USD)
90+
$4.22889
Exquisite packaging
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The NGTB30N120IHRWG by onsemi is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With onsemi's reputation for quality, the NGTB30N120IHRWG is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 384 W
- Switching Energy: 700µJ (off)
- Input Type: Standard
- Gate Charge: 225 nC
- Td (on/off) @ 25°C: -/230ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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