NGTB40N120FL2WG
onsemi
onsemi
IGBT TRENCH/FS 1200V 80A TO247
$0.00
Available to order
Reference Price (USD)
1+
$5.75000
30+
$4.90500
120+
$4.27500
510+
$3.66600
1,020+
$3.12000
Exquisite packaging
Discount
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The NGTB40N120FL2WG by onsemi is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the NGTB40N120FL2WG delivers robust performance. onsemi's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate NGTB40N120FL2WG into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 535 W
- Switching Energy: 3.4mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 313 nC
- Td (on/off) @ 25°C: 116ns/286ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 240 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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