NHUMH10F
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.05
Available to order
Reference Price (USD)
1+
$0.05172
500+
$0.0512028
1000+
$0.0506856
1500+
$0.0501684
2000+
$0.0496512
2500+
$0.049134
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NHUMH10F by Nexperia USA Inc. is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. Nexperia USA Inc.'s NHUMH10F is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz, 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Diodes Incorporated
ADC124EUQ-7
onsemi
SMUN5112DW1T1G
Nexperia USA Inc.
PUMD12,115
Nexperia USA Inc.
PEMH24,115
Toshiba Semiconductor and Storage
RN2964(TE85L,F)
Toshiba Semiconductor and Storage
RN2905,LF(CT
Toshiba Semiconductor and Storage
RN2708,LF
Toshiba Semiconductor and Storage
RN4909,LXHF(CT
Toshiba Semiconductor and Storage
RN4986FE,LXHF(CT
Toshiba Semiconductor and Storage